LEDs & OLEDs
White Paper | Technology
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Mar 06, 2012
At High Environmental Temperatures and at Very Low Power LED's Wall Plug Efficiency Exceeds 100%

White Paper | Technology
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Mar 07, 2012
Flexible Organic LED (OLED) Lighting Reaches High Energy Efficiency

Technology
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Apr 13, 2012
On Time, Immediately before Light+Building, Cree Comes Up with a New R&D Performance Record of 254 Lumen-Per-Watt

News-Spot | Technology
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Apr 25, 2012
Philips Develops Technology to Reduce Dependence on Rare Earths for LEDs

Technology
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May 02, 2012
Low Efficiency Droop LED - Overcoming the Mysterious Phenomenon Could Lead to Affordable LED Lighting

Technology
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May 03, 2012
Strategy Analytics Study Predicts that LED Manufacturers are Considering Gallium Nitride on Silicon
As the LED market faces the challenges of softening demand, reduced government subsidies and rapidly declining pricing, manufacturers must investigate new techniques to improve cost structure. Most of the LEDs currently produced use a Gallium Nitride (GaN)-on-sapphire manufacturing process. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, “Compound Semiconductor Industry Review February 2012: Optoelectronics, Materials and Equipment,” provides details of two companies that have purchased equipment from Veeco Instruments to develop less costly GaN-on-silicon fabrication processes, SemiLEDS and Epistar. The report also captures announcements for companies such as Soitec, AIXTRON, AXT, Hitachi Cable, JDSU, Sharp, Furukawa, Finisar, Oclaro, Emcore, GigOptix, IQE and Avago Technologies.
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Technology
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May 08, 2012
GT Advanced Technologies Releases Findings of Latest Case Study on Impact of Sapphire Material on HB LED Manufacturing

Technology
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May 09, 2012
NGK Developed GaN Wafer for Ultra High Brightness LEDs

Technology
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May 11, 2012
Bridgelux and Toshiba Achieve World Class Performance for 8″ GaN-On-Silicon LEDs

Technology
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Jul 07, 2012
LED System Design with Cititzen LEDs (by A. Lohrer, Endrich)

Fundings + Projects
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Jul 13, 2012
Utah Physicists Invent ‘Spintronic’ LED

White Paper | Technology
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Jul 31, 2012
Cree Announces 170 Lumen-Per-Watt LED Light Bulb Demonstrator
Less than one year after showcasing the 152 lumens-per-watt concept LED bulb, Cree, Inc. (Nasdaq: CREE) delivers a new performance benchmark with the 170 lumens-per-watt (LPW) prototype LED light bulb. The innovations behind the high-performance 170 LPW LED bulb are enabling significantly higher efficacy and lower cost for Cree’s luminaire portfolio and demonstrate Cree’s continued commitment to accelerate the adoption of LED lighting by addressing initial cost and payback – key barriers to widespread LED lighting adoption.
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Fundings + Projects | White Paper
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Aug 01, 2012
Researchers Study How to Avoid Charge Traps in Plastic Electronics

White Paper | Technology
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Sep 11, 2012
SMART-Project Aims to Develop Logic and Light on a Chip Using GaN-on-Si Technology
The research project Low Energy Electronics Systems (LEES) has started its work with a kick-off meeting. The program’s initiator is the renowned Singapore MIT Alliance for Research and Technology (SMART) Center based in Singapore. The LEES team consists of eminent research and science specialists and is targeting the development of cuttingedge technology to increase energy efficiency and advance high-tech industries that complement microelectronics. Two AIXTRON CRIUS® 1x200 mm systems, which the project managers ordered early this year, will form the technological foundation basis for the LEES project work. They will be available for use in the project from the fourth quarter of 2012.
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Technology
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Sep 13, 2012
NTNU Researchers Commercialize Semiconductors Grown on Graphene

Products, Materials + Tools
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Oct 05, 2012
Key Milestone Reached in OLED Development: cynora Presents New Flexible Prototype

Technology
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Nov 06, 2012
Development of Gallium Nitride Wafers Nearly Doubling Green LED Luminous Efficiency

White Paper | Technology
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Nov 26, 2012
BluGlass Demonstrates Low Temperature Grown n-GaN Films that Meet Industry Benchmarks
Australian clean technology innovator, BluGlass Limited announced today that it is now producing n-type gallium nitride (GaN) films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote Plasma Chemical Vapour Deposition (RPCVD) technology when grown on top of MOCVD GaN templates.
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Technology
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Dec 07, 2012
Copper, Gold and Tin for Efficient LED Chips

White Paper | Technology
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Jan 09, 2013
Scientists Mimic Fireflies to Make Brighter LEDs
