IP, Reports & Roadmaps
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Aug 03, 2010
Epistar Joins Group of Licensees of Gertrude Neumark Rothschild
Epistar Corporation obtained a worldwide license from Dr. Neumark for the ’499 Patent as well as Dr. Neumark’s United States Patent No. 4,904,618, issued February 27, 1990.
Concerning the investigation instituted by the United States International Trade Commission (Inv. No. 337-TA-640) based on a complaint filed by Dr. Gertrude Neumark Rothschild (“Dr. Neumark”) of New York State, U.S.A., seeking a block on imports, etc., of short-wavelength LEDs, etc. based on United States Patent No. 5,252,499, issued October 12, 1993, entitled “Wide Band-Gap Semiconductors Having Low Bipolar Resistivity and Method of Formation” (the “’499 Patent”), please be informed as follows:
Epistar Corporation obtained a worldwide license from Dr. Neumark for the ’499 Patent as well as Dr. Neumark’s United States Patent No. 4,904,618, issued February 27, 1990, entitled “Process for Doping Crystals of Wide Band Gap Semiconductors” (the “’618 Patent”) and their foreign counterpart patents. Under the license, Customers that have been using or will use LED chips made or to be made by Epistar Corporation will be free from any patent infringement assertion under the ’499 Patent, the ’618 Patent or any of their counterpart patents by Dr. Neumark in relation to products that use such LED chips.
About Epistar Corporation:
Epistar Corporation, headquartered in the Hsinchu Science-based Industrial Park, Taiwan since September 1996, focuses on developing, manufacturing and marketing high brightness Light Emitting Diode (LED) products. Applying its own proprietary Metal Organic Vapor Phase Epitaxy (MOVPE) technology, Epistar has successfully commercialized the full spectrum range of high brightness LEDs with the characteristics of compact size, low power consumption and long operation life. For further information, please visit: http://www.epistar.com.tw/news-e.htm
Epistar Corporation obtained a worldwide license from Dr. Neumark for the ’499 Patent as well as Dr. Neumark’s United States Patent No. 4,904,618, issued February 27, 1990, entitled “Process for Doping Crystals of Wide Band Gap Semiconductors” (the “’618 Patent”) and their foreign counterpart patents. Under the license, Customers that have been using or will use LED chips made or to be made by Epistar Corporation will be free from any patent infringement assertion under the ’499 Patent, the ’618 Patent or any of their counterpart patents by Dr. Neumark in relation to products that use such LED chips.
About Epistar Corporation:
Epistar Corporation, headquartered in the Hsinchu Science-based Industrial Park, Taiwan since September 1996, focuses on developing, manufacturing and marketing high brightness Light Emitting Diode (LED) products. Applying its own proprietary Metal Organic Vapor Phase Epitaxy (MOVPE) technology, Epistar has successfully commercialized the full spectrum range of high brightness LEDs with the characteristics of compact size, low power consumption and long operation life. For further information, please visit: http://www.epistar.com.tw/news-e.htm
