Intellectual Properties

IP, Reports & Roadmaps | Apr 29, 2017
SSC Wins Repeated Attempts to Challenge its White LED Patent
Seoul Semiconductor (KOSDAQ: 046890), one of the eight largest LED manufacturers in the world, announced that on October 11, 2007 the Patent Court of Korea turned down appeals brought by Taiwan-based Advanced Optoelectronic Technology Inc.(AOT) and Korea-based ITSWELL to overturn earlier decisions from the Korean Intellectual Property Tribunal. The Tribunal had rejected patent invalidation actions brought by AOT and ITSWELL against Seoul Semiconductors utility patent for producing white LED. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Seoul Semiconductor reacts on Nichia's Lawsuit
Seoul Semiconductor (KOSDAQ: 046890), one of the eight largest LED manufacturers in the world, announced today that on September 17, 2007 Nichia Corporation filed a lawsuit in the Seoul Central District Court against Seoul Semiconductor Co., Ltd. ("Seoul Semiconductor"). The suit alleges that Seoul Semiconductor's blue chips for white LED products (part no. TWH104-HS), which Seoul Semiconductor produces and sells, infringe on Nichia's Korean patent (no. 406201). Nichia seeks damages for past infringement as well as an injunction against any further infringing activity. Seoul Semiconductor received the complaint from Nichia on Oct 1st, 2007 and following its investigation, responds it is clear that Seoul Semiconductor has not infringed on the patent (no 406201). Seoul Semiconductor has patent technologies as below and has not infringed on the patent above. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Toyoda Gosei and OSRAM GmbH enter Agreement concerning LED-related patents
Toyoda Gosei Co., Ltd. (“Toyoda Gosei”) and OSRAM GmbH, Germany (“OSRAM”), entered an agreement to allow the companies (including subsidiaries) to use each other’s patents for specific technologies in Group III-V nitride compound semiconductor light emitting diodes (“LEDs”), which include white LEDs technology. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Led package structure and method for manufacturing the same
Led package structure and method for manufacturing the same A LED package structure is disclosed. The LED package structure includes a substrate, a light emitting diode, a plasma chemical vapor deposition layer and a transparent material layer, wherein the substrate has a plurality of contacts. The light emitting diode is disposed on the substrate and electrically contacted to the contacts. The plasma chemical vapor deposition layer is disposed on the light emitting diode and the refractive index of the plasma chemical vapor deposition layer is smaller than that of the light emitting diode. The transparent material layer is disposed on the plasma chemical vapor deposition layer and the refractive index of the transparent material layer is smaller than that of the plasma chemical vapor deposition layer. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Competitive Technologies Signs Marketing Agreement for Over 50 LED Patented Technologies
Competitive Technologies, Inc. (AMEX: CTT) announced today that it has signed a marketing and royalty sharing agreement with a Fortune 100 company to license and commercialize their group of over 50 U.S. patents related to Light Emitting Diodes (LEDs). The LED industry, also referred to as Solid State Lighting (SSL), is undergoing rapid growth and is projected to be a $7 billion industry in three years. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
NICHIA ANNOUNCES EXPANDED PATENT CROSS LICENSE WITH CREE AND FILES LAWSUITE AGAINST SEOUL SEMICONDUTOR LTD IN KOREA
Nichia Corporation today announced that Nichia and Cree, Inc. (Nasdaq: CREE) have entered into an agreement that expands their cross license arrangements announced in 2002 and 2005 to include additional patents relating to white LED technology and certain Cree patents relating to nitride lasers. At the same time Nichia filed a lawsuit in the Seoul Central District Court against Seoul Semiconductor Co., Ltd. ("Seoul Semiconductor") for infringing Nichia's patent. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Seoul Semiconductor, Korea and OSRAM, Germany Have Signed a Patent Cross License Agreement
Seoul Semiconductor, Korea and OSRAM, Germany Have Signed a Patent Cross License Agreement Seoul Semiconductor (KOSDAQ; 046890), the eighth-largest LED manufacturer in the world, announced today that it has signed a patent cross-license agreement with OSRAM GmbH, a leading LED manufacturer based in Munich, Germany. Under this agreement, Seoul Semiconductor and OSRAM including its wholly-owned subsidiary OSRAM Opto Semiconductors of Regensburg, Germany, will share their patents pertaining to white and visible LED technologies. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
ITC Denies Epistar`s Motion to Stay Exclusion Order in Investigation Initiated by Philips Lumileds
The United States International Trade Commission (ITC) has denied Epistar`s motion to stay the ITC`s Exclusion Order barring importation of Epistar`s OMA, MB and GB LEDs. After the ITC ruled that Epistar`s current AlInGaP LEDs infringe Philips Lumileds` patent rights and issued an exclusion order banning importation of those LEDs, Epistar filed motions before both the ITC and the U.S. Court of Appeals for the Federal Circuit to stay enforcement of the exclusion order. The ITC has denied Epistar`s motion. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Light emitting diode package
Light emitting diode package Provided an LED package comprising a first package composed of a first region serving as a first electrode and a second region which is formed so as to overlap a portion of the first region, the second region defining a molding material filling cavity; one or more LED chips mounted on the first region of the first package; a second package formed under the second region of the first package, the second package being insulated by the first region and an insulating member so as to serve as a second electrode; conductive wire for electrically connecting the LED chips and the second package; and a molding material filled inside the second region of the first package so as to protect the LED chips and the conductive wire. The first and second packages are formed of aluminum. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Nitride based LED with a p-type injection region
Nitride based LED with a p-type injection region An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has a surface profile (24B) defined by a plurality of columnar projections (24A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer (10). The p-electrode (16) is in contact with the p-GaN layer (10) at the top surface of each projection (24A). Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Seoul Semiconductor Wins Patent Case in Taiwan
Seoul Semiconductor (KOSDAQ: 046890), one of the ten largest LED manufacturers in the world, announced today that a Taiwan Intellectual Property Office has ruled that the invalidation action brought by Advanced Optoelectronic Technology Inc.(AOT) against Seoul Semiconductor s white LED patent in Taiwan is not sustained. Read more »
IP, Reports & Roadmaps | Dec 31, 1969
Flip-chip light emitting diode with high light-emitting efficiency
Flip-chip light emitting diode with high light-emitting efficiency A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Flip-chip light emitting diode with high light-emitting efficiency
Flip-chip light emitting diode with high light-emitting efficiency A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Packages for semiconductor LEDs utilizing dispensed reflectors and methods of forming the same
Packages for semiconductor LEDs utilizing dispensed reflectors and methods of forming the same A packaged LED includes a substrate, an LED chip on the upper surface of the substrate, a first encapsulant material, including a reflective material, on the substrate and spaced apart from the LED chip, and a second encapsulant material on the LED chip. A method of forming a packaged LED includes forming a first meniscus control feature on a substrate and defining a first region of the substrate, forming a second meniscus control feature surrounding the first region and defining a second region of the substrate between the first meniscus control feature and the second meniscus control feature, mounting an LED chip within the first region, dispensing a first encapsulant material including a reflective material within the second region, curing the first encapsulant material, dispensing a second encapsulant material on the substrate within the first region, and curing the second encapsulant material. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Color sensor integrated light emitting diode for LED backlight
Color sensor integrated light emitting diode for LED backlight A color sensor integrated light emitting diode (LED) is packaged with LED and color sensor mounted side by side inside LED package comprising a heat sink for mounting LED and the color sensor, both the color sensor and LED being buried by a high refractive index polymer followed by a diffuser layer and light extraction layer, all of which are transparent. Posts electrically linked to LED and color sensor inside the package are provided for external connection to LED and color sensor. Plurality of color sensors and LEDs can be packaged inside a single package with proper orientation of desired color LEDs to receive desired color by color sensors. Color change at the very source of light emission can be controlled with color sensor integrated LED package more effectively than conventional methods. Plurality of these packages can be employed for LED backlight for LCD, consumer lighting, decorative lighting and signage displays. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Color LED driver
Color LED driver Disclosed herein is a color LED driver, which is capable of being implemented by a compact structure without a feedback structure and accompanying a small size and low cost, by directly connecting a negative temperature coefficient (NTC) thermistor to a driving current path of a color LED applied to an LCD backlight to compensate a characteristic variation of the LED due to a variation in a temperature. The color LED driver includes a driving constant voltage source 100 which supplies a predetermined driving constant voltage VD; a driving circuit 200 which converts the driving constant voltage VD of the driving constant voltage source 100 into a plurality of driving currents, for driving color LEDs, the plurality of driving currents including red LED driving current Ird, green LED driving current Igd and blue LED driving current Ibd; a temperature compensation unit 300 which compensates variations in the red LED driving current Ird and the green LED driving current Igd due to a variation in a temperature, among the plurality of driving currents from the driving circuit 200; and an LED unit 400 including a plurality of color LEDs which are turned on by the driving currents from the temperature compensation circuit 300 and the driving current from the driving circuit 200. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Integrated led chip to emit multiple colors and method of manufacturing the same
Integrated led chip to emit multiple colors and method of manufacturing the same The present invention is a monolithic, multi-colored LED chip and a method for making the same. The LED chip is comprised of a substrate and a plurality of light emitting structures, each light emitting structure capable of emitting a wavelength of light unique compared to others and each structure layered on top of another structure and separated by a dielectric layer. The light emitting structures are then capable of independent or tandem activation, yielding the original colors of each section, blends of colors, and white light. The method starts with the base for such a chip and etches layers of the chip away, leaving exposed sections, to reach electrical contact layers for each light emitting structure. Electrically conductive material is then used to fill the exposed sections and is, in turn, etched away to leave contacts. An insulating material is then used to fill in the resultant areas. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Settlement of Patent Litigation with OSRAM
Citizen Electronics Co., Ltd. with headquarters in Fujiyoshida-city, Yamanashi, Japan and President, Takashi Masuzawa (“CITIZEN ELECTRONICS”), a totally-held subsidiary of Citizen Holdings Co., Ltd. with headquarters in Nishi-Tokyo city, Tokyo, Japan and President Makoto Umehara, reached a settlement with Osram GmbH Munich, Germany and its subsidiary OSRAM Opto Semiconductors GmbH Regensburg, Germany (collectively “OSRAM”) over patent lawsuit and litigation cases that have been running since 2005, and concluded a settlement agreement on July 13, 2007. Read more »
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