Technologies Archive
Technology
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Feb 11, 2013
New Atomic Layer Deposition Process for Nitride LED Reflector Structures

Standardization + Regulation | Technology
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Feb 08, 2013
LEDOTRON: Digital Dimming Technology for a New World of Lighting Convenience

White Paper | Technology
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Jan 30, 2013
Tamura and Koha Demonstrate White LED Using Gallium Oxide at Lighting Japan 2013

White Paper | Technology
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Jan 30, 2013
New Options for Transparent Contact Electrodes

Technology
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Jan 29, 2013
University Claims Development of Revolutionary New Zirconium-Doped Hafnium Oxide based Low-Cost LED

Technology
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Jan 10, 2013
Dimming with Warmer, Cozier White Light - NXP Transforms LED Color Quality

White Paper | Technology
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Jan 09, 2013
Scientists Mimic Fireflies to Make Brighter LEDs

White Paper | Technology
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Dec 19, 2012
New LED-Lighting Driver Design from Power Integrations Delivers Long Lifetime and High Efficiency

Technology
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Dec 13, 2012
Nature Materials Study: Boosting Heat Transfer with Nanoglue Might also Improve LED Cooling

Technology
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Dec 07, 2012
Copper, Gold and Tin for Efficient LED Chips

White Paper | Technology
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Dec 05, 2012
Power Integrations Sets New Standard for Power Density in LED-Driver Reference Design for T8-Tube Replacement

White Paper | Technology
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Nov 26, 2012
BluGlass Demonstrates Low Temperature Grown n-GaN Films that Meet Industry Benchmarks
Australian clean technology innovator, BluGlass Limited announced today that it is now producing n-type gallium nitride (GaN) films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote Plasma Chemical Vapour Deposition (RPCVD) technology when grown on top of MOCVD GaN templates.
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Technology
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Nov 06, 2012
Development of Gallium Nitride Wafers Nearly Doubling Green LED Luminous Efficiency

White Paper | Technology
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Oct 10, 2012
Fan Efficiency, An Increasingly Important Selection Criteria

Technology
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Sep 13, 2012
NTNU Researchers Commercialize Semiconductors Grown on Graphene

White Paper | Technology
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Sep 11, 2012
SMART-Project Aims to Develop Logic and Light on a Chip Using GaN-on-Si Technology
The research project Low Energy Electronics Systems (LEES) has started its work with a kick-off meeting. The program’s initiator is the renowned Singapore MIT Alliance for Research and Technology (SMART) Center based in Singapore. The LEES team consists of eminent research and science specialists and is targeting the development of cuttingedge technology to increase energy efficiency and advance high-tech industries that complement microelectronics. Two AIXTRON CRIUS® 1x200 mm systems, which the project managers ordered early this year, will form the technological foundation basis for the LEES project work. They will be available for use in the project from the fourth quarter of 2012.
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White Paper | Technology
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Aug 30, 2012
Power Integrations Unveils A19 LED Driver Reference Design Targeting 100 W Incandescent Bulb Replacements

Technology
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Aug 14, 2012
ASSIST Released Calculation Guidelines to Avoid Stroboscopic Effects in SSL Lighting

White Paper | Technology
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Aug 02, 2012
SWITCH CEO Reveals Best-Kept Secret in LED Lighting

White Paper | Technology
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Jul 31, 2012
Cree Announces 170 Lumen-Per-Watt LED Light Bulb Demonstrator
Less than one year after showcasing the 152 lumens-per-watt concept LED bulb, Cree, Inc. (Nasdaq: CREE) delivers a new performance benchmark with the 170 lumens-per-watt (LPW) prototype LED light bulb. The innovations behind the high-performance 170 LPW LED bulb are enabling significantly higher efficacy and lower cost for Cree’s luminaire portfolio and demonstrate Cree’s continued commitment to accelerate the adoption of LED lighting by addressing initial cost and payback – key barriers to widespread LED lighting adoption.
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Technology
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Jul 07, 2012
LED System Design with Cititzen LEDs (by A. Lohrer, Endrich)

Technology
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Jul 05, 2012
New Thermal Management Product Manufacturing Process Brightens Future of LED Lighting

Technology
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May 11, 2012
Bridgelux and Toshiba Achieve World Class Performance for 8″ GaN-On-Silicon LEDs

Technology
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May 09, 2012
NGK Developed GaN Wafer for Ultra High Brightness LEDs

Technology
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May 08, 2012
GT Advanced Technologies Releases Findings of Latest Case Study on Impact of Sapphire Material on HB LED Manufacturing

Technology
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May 03, 2012
Strategy Analytics Study Predicts that LED Manufacturers are Considering Gallium Nitride on Silicon
As the LED market faces the challenges of softening demand, reduced government subsidies and rapidly declining pricing, manufacturers must investigate new techniques to improve cost structure. Most of the LEDs currently produced use a Gallium Nitride (GaN)-on-sapphire manufacturing process. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, “Compound Semiconductor Industry Review February 2012: Optoelectronics, Materials and Equipment,” provides details of two companies that have purchased equipment from Veeco Instruments to develop less costly GaN-on-silicon fabrication processes, SemiLEDS and Epistar. The report also captures announcements for companies such as Soitec, AIXTRON, AXT, Hitachi Cable, JDSU, Sharp, Furukawa, Finisar, Oclaro, Emcore, GigOptix, IQE and Avago Technologies.
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Technology
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May 02, 2012
Low Efficiency Droop LED - Overcoming the Mysterious Phenomenon Could Lead to Affordable LED Lighting

News-Spot | Technology
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Apr 25, 2012
Philips Develops Technology to Reduce Dependence on Rare Earths for LEDs

Technology
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Apr 13, 2012
On Time, Immediately before Light+Building, Cree Comes Up with a New R&D Performance Record of 254 Lumen-Per-Watt

White Paper | Technology
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Mar 13, 2012
Diamond Brightens the Performance of Electronic Devices and LEDs
