Cree Demonstrates High Quality 150-mm Silicon Carbide Substrates
Cree, Inc. announced today that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree’s achievement of 150-mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range”.
About Cree:
Cree is leading the LED lighting revolution and setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications.
Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.
