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Figure 2. Roughening of the p-doped GaN surface using nanosphere lithography. (a) The nanospheres are first spin-coated onto the sample, followed by dry etching to define patterns. (b) The silica spheres and protection layer are then removed. The device-fabrication process is completed following deposition of contact metal. (c) Structure of an LED equipped with nanorod reflectors.https://www.led-professional.com/media/technology_light-generation_using-nanostructures-to-improve-led-light-emission_roughening-of-the-p-doped-gan-surface-using/viewhttps://www.led-professional.com/media/technology_light-generation_using-nanostructures-to-improve-led-light-emission_roughening-of-the-p-doped-gan-surface-using/@@images/image-1200-d9bc57833920225f9fd06a2a560bdd58.jpeg
Figure 2. Roughening of the p-doped GaN surface using nanosphere lithography. (a) The nanospheres are first spin-coated onto the sample, followed by dry etching to define patterns. (b) The silica spheres and protection layer are then removed. The device-fabrication process is completed following deposition of contact metal. (c) Structure of an LED equipped with nanorod reflectors.
