Figure 2. Roughening of the p-doped GaN surface using nanosphere lithography. (a) The nanospheres are first spin-coated onto the sample, followed by dry etching to define patterns. (b) The silica spheres and protection layer are then removed. The device-fabrication process is completed following deposition of contact metal. (c) Structure of an LED equipped with nanorod reflectors.

Figure 2. Roughening of the p-doped GaN surface using nanosphere lithography. (a) The nanospheres are first spin-coated onto the sample, followed by dry etching to define patterns. (b) The silica spheres and protection layer are then removed. The device-fabrication process is completed following deposition of contact metal. (c) Structure of an LED equipped with nanorod reflectors.