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Spatial distribution of photoluminescence intensities of samples with and without the SiO2 layer. (a) and (b) show the results obtained by performing measurements in the planes parallel and perpendicular to the V-shaped grooves, respectively. In the plane perpendicular to the V-shaped grooves, photoluminescence intensity is concentrated in the normal direction to the ridge-top flat plane.https://www.led-professional.com/media/technology_light-generation_successful-extraction-of-light-from-semiconductors-with-the-highest-efficiency_aist_photoluminescence_intensities-jpg/viewhttps://www.led-professional.com/media/technology_light-generation_successful-extraction-of-light-from-semiconductors-with-the-highest-efficiency_aist_photoluminescence_intensities-jpg/@@images/image-1200-c2463b19b6a4b308291a2df1f5995636.jpeg
Spatial distribution of photoluminescence intensities of samples with and without the SiO2 layer. (a) and (b) show the results obtained by performing measurements in the planes parallel and perpendicular to the V-shaped grooves, respectively. In the plane perpendicular to the V-shaped grooves, photoluminescence intensity is concentrated in the normal direction to the ridge-top flat plane.
