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The principle architecture of a bottom emission OLED incorporating the intrinsic emission layers into the Novaled PIN OLED® technology by using doped transport layers: holes are injected from the anode and transported by p-hole transport layer (p-HTL) to the emitting layer (EML). Electrons are injected from the cathode and transported by the n-electron transport layer (n-ETL). Recombination of the charge carriers takes place in the EML and light is emittedhttps://www.led-professional.com/media/technology_light-generation_novaled-develops-worlds-most-power-efficient-fluorescent-white-pin-oleds_novaled-pin-oleda-r-technology-jpg/viewhttps://www.led-professional.com/media/technology_light-generation_novaled-develops-worlds-most-power-efficient-fluorescent-white-pin-oleds_novaled-pin-oleda-r-technology-jpg/@@images/image-1200-92abc68a4bdb5b4f879107e227f20954.jpeg
The principle architecture of a bottom emission OLED incorporating the intrinsic emission layers into the Novaled PIN OLED® technology by using doped transport layers: holes are injected from the anode and transported by p-hole transport layer (p-HTL) to the emitting layer (EML). Electrons are injected from the cathode and transported by the n-electron transport layer (n-ETL). Recombination of the charge carriers takes place in the EML and light is emitted