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Figure 3: AFM data illustrating the NI density for a) sample A and b) sample B. The overgrowth of sparse NIs can result in formation of new islands (c). Using increased reactor pressure the formation of new islands during HT overgrowth can be suppressed (d). All the scans are 10 μm × 10 μm.https://www.led-professional.com/media/resources-1_articles_high-quality-gan-substrates-for-modern-led-technology_substrate3-jpg/viewhttps://www.led-professional.com/media/resources-1_articles_high-quality-gan-substrates-for-modern-led-technology_substrate3-jpg/@@images/image-1200-7e7ec70cc4165a4031eafdcf1cc05568.jpeg
Figure 3: AFM data illustrating the NI density for a) sample A and b) sample B. The overgrowth of sparse NIs can result in formation of new islands (c). Using increased reactor pressure the formation of new islands during HT overgrowth can be suppressed (d). All the scans are 10 μm × 10 μm.
