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Figure 1: Schematic of cross-sectional view of the growing GaN layer: (a) stage I – inclination of TDs during growth; dashed line represents partially coalesced islands with TDs terminating at bottoms of grooves; at the interface TDs close up and form a misfit dislocation (MD); (b) stage I – optional filling of grooves with mask material to enhance the probability for TD inclination; (c) stage II – regrowth step with flattened surface and TD reactions.https://www.led-professional.com/media/resources-1_articles_high-quality-gan-substrates-for-modern-led-technology_substrate1-jpg/viewhttps://www.led-professional.com/media/resources-1_articles_high-quality-gan-substrates-for-modern-led-technology_substrate1-jpg/@@images/image-1200-7e7ec70cc4165a4031eafdcf1cc05568.jpeg
Figure 1: Schematic of cross-sectional view of the growing GaN layer: (a) stage I – inclination of TDs during growth; dashed line represents partially coalesced islands with TDs terminating at bottoms of grooves; at the interface TDs close up and form a misfit dislocation (MD); (b) stage I – optional filling of grooves with mask material to enhance the probability for TD inclination; (c) stage II – regrowth step with flattened surface and TD reactions.
