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The principle architecture of a bottom emission OLED incorporating the intrinsic emission layers into the Novaled PIN OLED® technology by using doped transport layers: holes are injected from the anode and transported by p-hole transport layer (p-HTL) to the emitting layer (EML). Electrons are injected from the cathode and transported by the n-electron transport layer (n-ETL). Recombination of the charge carriers takes place in the EML and light is emittedhttps://www.led-professional.com/media/products_leds_led_modules_novaled-develops-improved-highly-power-efficient-white-pin-oleds-with-long-lifetime-and-excellent-light-quality_novaled-pin-oleda-r-technology-jpg/viewhttps://www.led-professional.com/media/products_leds_led_modules_novaled-develops-improved-highly-power-efficient-white-pin-oleds-with-long-lifetime-and-excellent-light-quality_novaled-pin-oleda-r-technology-jpg/@@images/image-1200-508856befc9638c7d34bf55e75feb54a.jpeg
The principle architecture of a bottom emission OLED incorporating the intrinsic emission layers into the Novaled PIN OLED® technology by using doped transport layers: holes are injected from the anode and transported by p-hole transport layer (p-HTL) to the emitting layer (EML). Electrons are injected from the cathode and transported by the n-electron transport layer (n-ETL). Recombination of the charge carriers takes place in the EML and light is emitted
